The Tystar Mini Tytan Furnace Stack contains two atmospheric pressure that are used to process batches of up to 25 6-inch or 4-inch wafers. The top tube is configured for wet or dry silicon oxidation and is equipped with a TLC clean that can be used pre-clean the tube prior to growth in order to eliminate mobile alkali ions thereby enabling the growth of high quality gate oxides at a temperature up to 1250 °C. The other tube is dedicated to high temperature (1250 °C) forming gas anneals.
Mini Tytan 4600
Thermal Anneal (Forming Gas, 1250C), Thermal Oxidation (Wet & Dry)