The SPTS Xactix E1 Xenon Difluoride Etcher can be used to isotropically etch Si, Ge, and Mo films. The XeF2 etch chemistry offers excellent selectivity to a wide range of materials, such as Al, SiO2, ZnO, Si3N4, and photoresist affording the possibility of using thin masks and incorporating etch-stop layers for undercutting.

Equipment Type

Xenon Difluoride Etcher

Manufacturer

SPTS

Model

e1

Location

Plasma Bay

Processes

Isotropically etch Si, Ge, and Mo films and release layers