Electron Beam Lithography System – 100 KeV

The Elionix ELS-G100 is a high speed, ultra high precision thermal field emission electron-beam lithography system. The ELS-G100 is capable of generating patterns with a line width of 6 nm. The system provides a stable 1.8 nm electron-beam using high beam current at 100 kV.

A laser interferometer stage, with reading resolution of 0.31 nm, enables a stitching accuracy of 15 nm and overlay accuracy of 20 nm. Significantly small distortion enables uniform and stable fine pattern writing over large writing fields. Uniform 10 nm lines can be drawn from the edge to the edge of a 500 um field without stitching. At a beam current of 1 nA, 20 nm lines can be written over an entire 500 um field without stitching. No stitching guarantees accuracy and eliminating the need for stage movement enhances writing speed.

Contacts

• Samantha Roberts, Ph.D.
  Nanofabrication Facility Director, Nanofabrication Facility
  sroberts@gc.cuny.edu