Xenon Difluoride Etcher

The SPTS Xactix E1 Xenon Difluoride Etcher can be used to isotropically etch Si, Ge, and Mo films. The XeF₂ etch chemistry offers excellent selectivity to a wide range of materials, such as Al, SiO₂, ZnO, Si₃N₄, and photoresist affording the possibility of using thin masks and incorporating etch-stop layers for undercutting.

Processes

• Isotropically etch Si, Ge, and Mo films and release layers

Contacts

• Shawn Kilpatrick
  Lab Manager, Nanofabrication Facility
  skilpatrick@gc.cuny.edu