![photo: STPT Exatix e1 Xenon Difluoride Etcher](https://asrc.gc.cuny.edu/wp-content/uploads/media/instruments/xenon-difluoride-etcher/nanofab-etching-xef2.jpg)
Xenon Difluoride Etcher
![photo: STPT Exatix e1 Xenon Difluoride Etcher](https://asrc.gc.cuny.edu/wp-content/uploads/media/instruments/xenon-difluoride-etcher/nanofab-etching-xef2.jpg)
The SPTS Xactix E1 Xenon Difluoride Etcher can be used to isotropically etch Si, Ge, and Mo films. The XeF2 etch chemistry offers excellent selectivity to a wide range of materials, such as Al, SiO2, ZnO, Si3N4, and photoresist affording the possibility of using thin masks and incorporating etch-stop layers for undercutting.
Processes
- Isotropically etch Si, Ge, and Mo films and release layers
Contacts
- Shawn Kilpatrick
Lab Manager, Nanofabrication Facility
skilpatrick@gc.cuny.edu