![photo: Oxford Instruments PECVD System](https://asrc.gc.cuny.edu/wp-content/uploads/media/instruments/plasma-enhanced-chemical-vapor-deposition-system-pecvd/nanofab-deposition-pecvd.jpg)
Plasma Enhanced Chemical Vapor Deposition System (PECVD)
![photo: Oxford Instruments PECVD System](https://asrc.gc.cuny.edu/wp-content/uploads/media/instruments/plasma-enhanced-chemical-vapor-deposition-system-pecvd/nanofab-deposition-pecvd.jpg)
The Oxford PlasmaPro System 100 PECVD is load-locked tool, capable of depositing silicon oxide, silicon nitride, amorphous silicon, and other films (under staff permission). The PECVD has a 600 W 13.56 MHz plasma source and has an electrically heated lower electrode, capable of a maximum temperature of 400 C. Additionally, the system has a 100 kHz low frequency generator connected to the top electrode. The tool is capable of processing wafers up to 8” in diameter, down to smaller wafers and chips.
Processes
Gases: N2, O2, N2O, NH3, SiH4/Ar, CF4, CH4
Contacts
- Shawn Kilpatrick
Lab Manager, Nanofabrication Facility
skilpatrick@gc.cuny.edu
Manufacturer / Model
Oxford Instruments / PlasmaPro NPG80 PECVD
Facility
Nanofabrication Facility
Keywords
deposition