Furnace Stack

photo: Tystar mini Tytan furnace stack

The Tystar Mini Tytan Furnace Stack contains two atmospheric pressure that are used to process batches of up to 25 6-inch or 4-inch wafers. The top tube is configured for wet or dry silicon oxidation and is equipped with a TLC clean that can be used pre-clean the tube prior to growth in order to eliminate mobile alkali ions thereby enabling the growth of high quality gate oxides at a temperature up to 1250 °C. The other tube is dedicated to high temperature (1250 °C) forming gas anneals.

Processes

  • Thermal Anneal (Forming Gas, 1250C)
  • Thermal Oxidation (Wet & Dry)

Contacts

  • Milan Begliarbekov, Ph.D.
    Technical Cleanroom Manager, Nanofabrication Facility
    Research Assistant Professor, Nanoscience Initiative
    mbegliarbekov@gc.cuny.edu

Manufacturer / Model

Tystar / Mini Tytan 4600

Facility

Nanofabrication Facility

Keywords

thermal processing