The Oxford PlasmaPro System 100 PECVD is load-locked tool, capable of depositing silicon oxide, silicon nitride, amorphous silicon, and other films (under staff permission). The PECVD has a 600 W 13.56 MHz plasma source and has an electrically heated lower electrode, capable of a maximum temperature of 400 C. Additionally, the system has a 100 kHz low frequency generator connected to the top electrode. The tool is capable of processing wafers up to 8” in diameter, down to smaller wafers and chips.
Plasma Enhanced Chemical Vapor Deposition (PECVD)
PlasmaPro NPG80 PECVD
Gases: N2, O2, N2O, NH3, SiH4/Ar, CF4, CH4